06.10.2010 LED34-HIGH-SMD5R 1 of 2 LED34-HIGH-SMD5R technical data mid-infrared light emitting diode, smd light emitting diodes with central wavelength 3.40 m series are based on heterostructures grown on inas substrates by mocvd. inas is used in the active layer. wide band gap solid solutions inassbp with p content 50% are used for god electron confinement. LED34-HIGH-SMD5R has a stable ouput power and a lifetime more then 80000 hours. features ? structure: inassb/inassbp ? peak wavelength: typ. 3.40 m ? optical ouput power: typ. 65 w qcw ? package: smd 5x5 mm with microreflector specifications rating item condition min. typ. max. unit peak wavelength t=300 k 3.30 3.40 3.49 m fwhm 150 ma cw 300 400 500 nm quasi-cw optical power 200 ma qcw 45 65 80 mw pulsed optical power 1 a 480 600 720 mw switching time t=300 k 10 20 30 ns operation voltage 200 ma qcw v operating temperature -240 ? +50 c emitting area 300x300 m soldering temperature 180 c package smd type package 5x5 mm based on high thermal conductivity ceramics with microreflector operating regime quasi-cw ? maximum current 220 ma ? recommended current 150-200ma pulsed ? maximum current 1 a (puls lenght 500 ns, repetition rate 2khz)
06.10.2010 LED34-HIGH-SMD5R 2 of 2 typical performance curves package ? tiny package for surface mounting ? anode and cathode are led to the metalized areas on the back side of the ceramic surface ? material ? low temperature co-fired ceramic (ltcc): - thermal conductivity 25 w/mk - thermoresistance 8 c/w ? microreflector provides the reduction of radiation divergence
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